Effect of crystallization temperature on microstructure and ferroelectric property of Bi3.25Eu0.75Ti3O12 thin films prepared by MOD method

Transactions of Nonferrous Metals Society of China (English Edition)

Volumn 16, Issue 5, 2006, Pages 1154-1158

  He, Lin ^a   Zhang, Tong ^b   Tang, Ming Hua ^a   Deng, Shui Feng ^a  

^a XIANGTAN UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

BET thin film; Bi layered perovskite; Ferroelectric property; Metal organic decomposition

Indexed keywords

ANNEALING; CRYSTALLIZATION; DECOMPOSITION; EFFECTS; EUROPIUM; FERROELECTRICITY; MICROSTRUCTURE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BET THIN FILM; BISMUTH TITANATE; FERROELECTRIC PROPERTIES;

FERROELECTRIC MATERIALS;

EID: 33846147059     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1003-6326(06)60393-2     Document Type: Article

References (18)

1. ZHENG X J, ZHOU Y C, ZHONG H. Dependence of fracture toughness on annealing temperature in PZT thin films produced by metal organic decomposition[J]. Journal of Materials Research, 2003, 18(3): 578-584.
2. ZHENG X J, LI J Y, ZHOU Y C. X-ray diffraction measurement of residual stress in PZT thin films prepared by pulsed laser deposition[J]. Acta Mater, 2004, 52(11): 3313-3332.
3. 3 ferroelectric thin films[J]. Acta Mater, 2003, 51: 3985-3997.
4. 12 films of uniform a-axis orientation on silicon substrates[J]. Science, 2002, 296: 2006-2009.
5. 2/Si(100) by metalorganic solution decomposition[J]. Phys Rev Lett, 2001, 78: 658-660.
6. CHON U, SHIM J S, JANG H M. Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate[J]. J Appl Phys, 2003, 93: 4769-4775.
7. 12 thin films prepared by metal organic decomposition method[J]. Thin Solid Films, 2005, 478: 6-12.
8. 12 film capacitors having large spontaneous polarizations[J]. Appl Phys Lett, 2001, 79: 3137-3139.
9. 12 films prepared by sol-gel process[J]. Appl Phys Lett, 2002, 81: 2611-2613.
10. 12 films[J]. Appl Phys Lett, 2003, 83: 2414-2416.
11. 12 thin films on Si substrate[J]. Journal of Crystal Growth, 2005, 280: 557-561.
12. 12 thin films under a moderate temperature annealing[J]. Appl Phys Lett, 2004, 85: 5661-5663.
13. 12 thin films prepared by sol-gel method[J]. Journal of Crystal Growth, 2005, 283: 81-86.
14. 2/Si(100) substrates by a sol-gel process[J]. Journal of Crystal Growth, 2004, 262: 327-333.
15. 4/Ar plasma[J]. Thin Solid Films, 2004, 447-448: 337-342.
16. 12 (x=0, 0.5, 0.75, 1.0, 1.5 and 2.0)[J]. J Appl Phys, 2002, 91: 3178-3187.
17. 12[J]. J Appl Phys, 1994, 76: 1819-1823.
18. 3 ferroelectric thin films[J]. Appl Phys Lett, 1996, 69: 25-27.