X-ray diffraction measurement of residual stress in PZT thin films prepared by pulsed laser deposition

Acta Materialia

Volumn 52, Issue 11, 2004, Pages 3313-3322

  Zheng, Xuejun ^a   Li, Jiangyu ^b   Zhou, Yichun ^a  

^a XIANGTAN UNIVERSITY   (China)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

Piezoelectricity; PZT thin film; Residual stress; X ray diffraction

Indexed keywords

ANISOTROPY; CRACKS; DIELECTRIC FILMS; ELASTIC MODULI; FERROELECTRIC THIN FILMS; GONIOMETERS; HIGH TEMPERATURE EFFECTS; LEAD COMPOUNDS; MICROELECTROMECHANICAL DEVICES; PIEZOELECTRICITY; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; TITANATE MINERALS; X RAY DIFFRACTION; ZIRCONIUM COMPOUNDS;

BRAGG LAW; EPITAXIAL STRESS; ISOTROPIC; TRANSFORMATION STRESS;

THIN FILMS;

EID: 2642562040     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2004.02.047     Document Type: Article

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