Electrical properties of Bi4-xEuxTi3O 12 (BET) thin films after etching in inductively coupled CF 4/Ar plasma

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 337-342

  Lim, Kyu Tae ^a   Kim, Kyoung Tae ^a   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

BET; Fatigue; Leakage current; Polarization

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; ELECTROMAGNETIC WAVE POLARIZATION; ETCHING; FATIGUE OF MATERIALS; FERROELECTRICITY; HYSTERESIS; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; LEAKAGE CURRENTS; MIXING; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL RESIDUE CONTAMINATION;

THIN FILMS;

EID: 1342302443     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01114-3     Document Type: Conference Paper

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