Influence of cracks generation on the structural and optical properties of GaN/Al 0.55 Ga 0.45 N multiple quantum wells

Applied Surface Science

Volumn 252, Issue 8, 2006, Pages 3043-3050

  Sun, Q ^a   Zhang, J C ^a   Huang, Y ^a   Chen, J ^a   Wang, J F ^a,b   Wang, H ^a   Li, D Y ^a   Wang, Y T ^a   Zhang, S M ^a   Yang, H ^a   Zhou, C L ^c   Guo, L P ^c   Jia, Q J ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b WUHAN UNIVERSITY   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Cracks; Dislocations; Multiple quantum wells; Nitrides; Vacancies; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

DISLOCATIONS; LOW-ENERGY POSITRON ANNIHILATION SPECTROSCOPY; TRIPLE-AXIS X-RAY DIFFRACTION; VACANCIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 31144458978     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.05.010     Document Type: Article

References (23)

1. T. Asano, S. Yoshizawa, S. Noda, N. Iizuka, K. Kaneko, N. Suzuki, and O. Wada Opt. Quant. Electron. 33 2001 963
2. A.Y. Cho, D.L. Sivco, H.M. Ng, C. Gmachl, A. Tredicucci, A.L. Hutchinson, S.N.G. Chu, and F. Capasso J. Cryst. Growth 227-228 2001 1 7
3. D. Hofstetter, S.S. Schad, H. Wu, J. Schaff, and L.F. Eastman Appl. Phys. Lett. 83 2003 572
4. T. Honda, A. Katsube, T. Sakaguchi, F. Koyama, and K. Iga Jpn. J. Appl. Phys. 34 1995 3527
5. S.J. Hearne, J. Han, S.R. Lee, J.A. Floro, D.M. Follstaedt, E. Chason, and I.S.T. Tsong Appl. Phys. Lett. 76 2000 1534
6. S. Einfeldt, H. Heinke, V. Kirchner, and D. Hommel J. Appl. Lett. 89 2001 2160
7. J.M. Bethoux, P. Vennegues, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond J. Appl. Lett. 94 2003 6499
8. S. Einfeldt, M. Diebelberg, H. Heinke, D. Hommel, D. Rudloff, J. Christen, and R.F. Davis J. Appl. Lett. 92 2002 118
9. D. Rudloff, T. Riemann, J. Christen, Q.K.K. Liu, A. Kaschner, A. Hoffmann, Ch. Thomsen, K. Vogeler, M. Diesselberg, S. Einfeldt, and D. Hommel Appl. Phys. Lett. 82 2003 367
10. R.S. Yu, L. Wei, B.Y. Wang, and Z.S. Yin Nucl. Instrum. Meth. Phys. Res. A 457 2001 419
11. D. Keith Bowen, and K.Tanner Brian High Resolution X-ray Diffractometry and Topography 1998 T.J. International Ltd Padstow p. 64
12. A.H. Compton, and S.K. Allison X-rays in Theories and Experiment 2nd ed. 1935 Van Nostrand company, Inc. Princeton New Jersey p. 674
13. X. He, and M. Razeghi J. Appl. Phys. 73 1993 3284
14. Z. Pan, Y.T. Wang, Y. Zhyang, Y.W. Lin, Z.Q. Zhou, L.H. Li, R.H. Wu, and Q.M. Wang Appl. Phys. Lett. 75 1999 223
15. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. Denbaars, and D.K. Gaskill Appl. Phys. Lett. 68 1996 643
16. C.G. Dunn, and E.F. Koch Acta Met. 5 1957 548
17. J.C. Zhang, J.F. Wang, Y.T. Wang, M. Wu, J.P. Liu, J.J. Zhu, and H. Yang J. Appl. Cryst. 37 2004 391 394
18. J. Neugebauer, and C.G. Van De Walle Appl. Phys. Lett. 69 1996 503
19. P. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa, J. Oila, S. Hautakangas, K. Saarinen, J. Likonen, and J. Keranen J. Appl. Phys. 92 2002 786
20. A.F. Wright, and J. Furthmuller Appl. Phys. Lett. 72 1998 3467
21. J. Elsner, R. Jones, M.I. Heggie, P.K. Stich, M. Haugh, T.H. Frauenheim, S. Oberg, and P.R. Briddon Phys. Rev. B 58 1998 12571
22. M. Clement, J.M.M. de Nijs, P. Balk, H. schut, and A. van Veen J. Appl. Phys. 79 1996 9029
23. L. Liszkay, C. Corble, L. Baroux, P. Hautojärvi, M. Bayhan, A.W. Brinkmann, and S. Tatarenko Appl. Phys. Lett. 64 1994 1380