Evidence of a high density of fixed negative charges in an insulation layer compound on silicon

Thin Solid Films

Volumn 385, Issue 1-2, 2001, Pages 126-131

  Konig D ^a   Rennau, M ^a   Henker, M ^a   Ehest, G ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL DEFECTS; ELECTRIC INSULATORS; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SOLAR CELLS;

DRIFT FIELD GENERATION; INTERFACE CHARGE;

MISFET DEVICES;

EID: 0037726761     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01926-X     Document Type: Article

References (25)

1. M.A. Green, A.W. Blakers, J. Shi, E.M. Keller, S.R. Wenham, IEEE Tr. Electron. Devices 31 (1984) 679.
2. 3 As Surface Passivation, Proc. of the 18th IEEE PVSC, Las Vegas, 1985, p. 1752.
3. D. König, G. Ehest, Solid State Electron. 44 (2000) 111.
4. K.W. Böer, Survey of Semiconductor Physics, Vol. 2, Van Nostrand Reinhold, New York, 1992, chapter 23.
5. D. König, G. Ehest, Sol. Energ. Mat. Sol. C. 56 (1998) 67.
6. K. Jäger, R. Hezel, IEEE Tr. Electron. Devices 32 (1985) 1824.
7. M. Schulz, Surf. Sci. 132 (1983) 422.
8. W.D. Eades, R.M. Swanson, J. Appl. Phys. 58 (1985) 4267.
9. T. Ohmi, M. Masayuki, M. Itano, T. Imaoka, I. Kawanabe, IEEE Tr. Electron. Devices 39 (1992) 537.
10. H. Fukuda, M. Yasuda, T. Iwabuchi, J. Appl. Phys. 72 (1992) 1906.
11. W. Heitmann, Thin Solid Films 5 (1970) 61.
12. O.S. Chen, J. Vac. Sci. Technol. A 17 (1999) 403.
13. Y. Danto, J. Salardenne, Vacuum 27 (1977) 293.
14. S.E. Kim, C. Steinbüchel, Solid State Electron. 43 (1999) 1019.
15. F. Christoph Jr., G. Teufer, US Patent 3 178 483, June 1965.
16. E. Staritzky, L.B. Asprey, Anal. Chem. 29 (1957) 984.
17. D.B. Shinn, D.S. Crocket, H.M. Haendler, Inorg. Chem. 5 (1966) 1927.
18. R.A. Heaton, C.C. Lin, Phys. Rev. B22 (1980) 3629.
19. M.A.C. Wevers, J.C. Schön, M. Jansen, J. Phys.: Cond. Mater. 11 (1999) 6487.
20. H. Tatewaki, Phys. Rev. B 60 (1999) 3777.
21. P. Daniel, A. Bulou, M. Rosseau, N. Nonet, M. Leblanc, J. Phys.: Cond. Mater. 2 (1990) 5663.
22. C.M. Goring, R.D. Bowler, E. Hernandez, Rep. Prog. Phys. 60 (1997) 1447.
23. F. Aryasetiawan, O. Gunnarson, Rep. Prog. Phys. 61 (1998) 237.
24. M. Schreiber, F. Epperlein, T. Vojta, 23rd Int. Conf. on the Phys. of Semiconductors, Proceedings, 2, Berlin/Germany, 1996, p. 165.
25. M. Elstner, D. Porezag, G. Jungnickel, J. Elsner, M. Haugk, Th. Frauenheim, S. Suhai, G. Seifert, Phys. Rev. B 58 (1998) 7260.