Growth of Au-catalysed Si nanowires by low pressure chemical vapour deposition on Si(100) and amorphous Si surfaces

Journal of Physics Condensed Matter

Volumn 18, Issue 48, 2006, Pages 10853-10859

  Santoni, A ^a   Villacorta, F Jimenez ^a,b   Rufoloni, A ^a   Mancini, A ^a  

^a ENEA   (Italy)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CATALYSIS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GOLD; SILICON; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

GROWTH TERMINATION; INHOMOGENEOUS SIDEWALLS; LOW PRESSURE CHEMICAL VAPOUR DEPOSITION; NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 33846075783     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/48/012     Document Type: Article

References (25)

1. Law M, Goldberger J and Yang P 2004 Annu. Rev. Mater. Res. 34 83
2. Yu J-Y, Chung S-W and Heath J R 2000 J. Phys. Chem. B 104 11864
3. Wu Y, Cui Y, Huynh L, Barrelet C J, Bell D C and Lieber C M 2004 Nano Lett. 4 433
4. Chung S-W, Yu J-Y and Heath J R 2000 Appl. Phys. Lett. 76 2068
5. Cui Y, Wei Q, Park H and Lieber C M 2001 Science 293 1289
6. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
7. Schubert L, Werner P, Zakharov N D, Gerth G, Kolb F M, Long L, Gösele U and Tan T Y 2004 Appl. Phys. Lett. 84 4968
8. Westwater J, Gosain D P, Tomiya S, Usui S and Ruda H 1997 J. Vac. Sci. Technol. B 15 554
9. Ozaki N, Ohno Y and Takeda S 1998 Appl. Phys. Lett. 73 3700
10. Kikkawa J, Ohno Y and Takeda S 2005 Appl. Phys. Lett. 86 123109
11. Morales A M and Lieber C M 1998 Science 279 208
12. Yu D P, Bai Z G, Ding Y, Hang Q L, Zhang H Z, Wang J J, Zou Y H, Qian W, Xiong G C, Zhou H T and Feng SQ 1998 Appl. Phys. Lett. 72 3458
13. Loreti S, Santoni A, Frycek R, Menicucci I, Minarini C and Della Sala D 2004 Mater. Sci. Forum 453/454 43
14. Pan H, Lim S, Poh C, Sun H, Wu X, Feng Y and Lin J 2005 Nanotechnology 16 417 and references therein
15. Rauscher H 2001 Surf. Sci. Rep. 42 207
16. Zhang Y F, Tang Y H, Wang N, Yu D P, Lee C S, Bello I and Lee S T 1998 Appl. Phys. Lett. 72 1835
17. Flammini R, Wiame F, Belkhou R, Taleb-Ibrahimi A, Gregoratti L, Barinov A, Marsi M and Kiskinova M 2004 Surf. Sci. 564 121
18. Molodsov S L, Laubshat C, Kaindl G, Shikin A M and Adamchuk V K 1991 Phys. Rev. B 44 8850
19. Yeh J J, Hwang J, Bertness K, Friedman D J, Cao R and Lindau I 1993 Phys. Rev. Lett. 70 3768
20. Zeng X B, Xu Y Y, Zhang S B, Hu Z H, Diao H W, Wang Y Q, Kong G L and Liao X B 2003 J. Cryst. Growth 247 13
21. Hannon J B, Kodambaka S, Ross F M and Tromp R M 2006 Nature 440 69
22. Peng H Y, Wang N, Shi W S, Zhang Y F, Lee C S and Lee S T 2001 J. Appl. Phys. 89 727
23. Givargizov E I 1975 J. Cryst. Growth 31 20
24. Kolb F M, Hofmeister H, Scholz R, Zacharias M, Gösele U, Ma D D and Lee S-T 2004 J. Electrochem. Soc. 151 G472
25. Ross F M, Tersoff J and Reuter M C 2005 Phys. Rev. Lett. 95 146104