Deep defect levels in standard and oxygen enriched silicon detectors before and after 60Co-γ-irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 111-116

  Stahl, J ^a   Fretwurst, E ^a   Lindstrom G ^a   Pintilie, I ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

DLTS; Radiation hardness; irradiation

Indexed keywords

DIFFUSION; GAMMA RAYS; IRRADIATION; POINT DEFECTS; RADIATION DAMAGE; RADIATION DETECTORS; RADIATION HARDENING; SILICON;

DEFECT LEVELS;

NUCLEAR PHYSICS;

EID: 0142126815     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01884-9     Document Type: Conference Paper

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