Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 552, Issue 1-2, 2005, Pages 20-26

  Bruzzi, M ^a   Bisello, D ^b   Borrello, L ^c   Borchi, E ^a   Boscardin, M ^d   Candelori, A ^b   Creanza, D ^e   Dalla Betta, G F ^d   Depalma, M ^e   Dittongo, S ^f   Focardi, E ^a   Khomenkov, V ^b   Litovchenko, A ^b   MacChiolo, A ^a   Manna, N ^e   Menichelli, D ^a   Messineo, A ^c   Miglio, S ^a   Petasecca, M ^g   Piemonte, C ^d   Pignatel, G U ^g   Radicci, V ^e   Ronchin, S ^d   Scaringella, M ^a   Segneri, G ^c   Sentenac, D ^c   Tosi, C ^a   Zorzi, N ^d   more..

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF PISA   (Italy)

^d ITC IRST   (Italy)

^e INFN SEZIONE DI BARI   (Italy)

^f SEZIONE DI TRIESTE   (Italy)

^g UNIVERSITY OF PERUGIA   (Italy)

Author keywords

Defects; Microstrip detectors; Radiation damage; Silicon detectors

Indexed keywords

DEFECTS; IRRADIATION; MICROSTRIP DEVICES; OXIDES; RADIATION DAMAGE; SILICON;

MICROSTRIP DETECTORS; PASSIVATION OXIDES; SILICON DETECTORS; THERMAL DONORS;

RADIATION DETECTORS;

EID: 26444574764     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.001     Document Type: Conference Paper

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