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Volumn 10, Issue 6, 1998, Pages 807-809

SiGe-Si quantum-well electroabsorption modulators

Author keywords

Electroabsorption; Modulators; Silicon germanium

Indexed keywords

ELECTROOPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0032095465     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.681491     Document Type: Article
Times cited : (30)

References (10)
  • 2
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    • (1991) IEEE Electron Device Lett. , vol.12 , pp. 276-278
    • Treyz, G.V.1    May, P.G.2    Halbout, J.-M.3
  • 3
    • 0027623916 scopus 로고
    • Integrated optical switches in silicon based on SiGe-waveguides
    • U. Fischer, B. Schüppert, and K. Petermann, "Integrated optical switches in silicon based on SiGe-waveguides," IEEE Photon. Technol. Lett., vol. 5, p. 785, 1993.
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 785
    • Fischer, U.1    Schüppert, B.2    Petermann, K.3
  • 6
    • 0031235368 scopus 로고    scopus 로고
    • Electroabsorption and electrooptic effect in SiGe-Si quantum wells: Realization of low-voltage optical modulators
    • O. Qasaimeh, J. Singh, and P. Bhattacharya, "Electroabsorption and electrooptic effect in SiGe-Si quantum wells: Realization of low-voltage optical modulators," IEEE J. Quantum Electron., vol. 33, pp. 1532-1536, 1997.
    • (1997) IEEE J. Quantum Electron. , vol.33 , pp. 1532-1536
    • Qasaimeh, O.1    Singh, J.2    Bhattacharya, P.3
  • 8
    • 0342836434 scopus 로고
    • Space-charge-limited current and capacitance in double-junction diodes
    • A. A. Grinberg, and S. Luryi, "Space-charge-limited current and capacitance in double-junction diodes," J. Appl. Phys., vol. 61, pp. 1181-1189, 1987.
    • (1987) J. Appl. Phys. , vol.61 , pp. 1181-1189
    • Grinberg, A.A.1    Luryi, S.2
  • 9
    • 0023108359 scopus 로고
    • Electrooptical effects in silicon
    • R. A. Soref and B R. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron., vol. QE-23, pp. 123-129, 1987.
    • (1987) IEEE J. Quantum Electron. , vol.QE-23 , pp. 123-129
    • Soref, R.A.1    Bennett, B.R.2
  • 10
    • 0025101420 scopus 로고
    • Schottky barrier diode characteristics under high level injection
    • W. Ng, S. Liang, and C. T. Salama, "Schottky barrier diode characteristics under high level injection," Solid-State Electron., vol. 33, pp. 39-46, 1990.
    • (1990) Solid-State Electron. , vol.33 , pp. 39-46
    • Ng, W.1    Liang, S.2    Salama, C.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.