NMOSFET ESD self-protection strategy and underlying failure mechanism in advanced 0.13-μm CMOS technology

IEEE Transactions on Device and Materials Reliability

Volumn 2, Issue 1, 2002, Pages 2-8

  Salman, Akram ^b   Gauthier, Robert ^c   Stadler, Wolfgang ^d   Esmark, Kai ^d   Muhammad, Mujahid ^c   Putnam, Chris ^c   Ioannou, Dimitris E ^a,b  

^a IEEE

^b Krasnow Institute for Advanced Study   (United States)

^c IBM MICROELECTRONICS   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

ESD failure mechanisms; ESD protection; GG MOSFET; Hot carriers; Oxide breakdown

Indexed keywords

COMPUTER SIMULATION; ELECTRIC DISCHARGES; ELECTROSTATICS; HOT CARRIERS; LEAKAGE CURRENTS; MEASUREMENT THEORY;

ESD FAILURE MECHANISMS; ESD PROTECTION; OXIDE BREAKDOWN;

MOSFET DEVICES;

EID: 33845585271     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2002.1014666     Document Type: Article

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