Non-uniform bipolar conduction in single finger NMOS transistors and implications for deep submicron ESD design

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 226-234

  Oh, Kwang Hoon ^a   Duvvury, C ^b   Salling, C ^b   Banerjee, K ^a   Dutton, R W ^a  

^a STANFORD UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

CMOS technology; Electric breakdown; Electrical resistance measurement; Electrostatic discharge; Fingers; MOSFETs; Protection; Pulse measurements; Space vector pulse width modulation; Voltage

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; PULSE WIDTH MODULATION; SILICIDES; SUBSTRATES; VECTOR SPACES; VOLTAGE CONTROL;

CMOS TECHNOLOGY; ELECTRICAL RESISTANCE MEASUREMENT; FINGERS; MOSFETS; PROTECTION; PULSE MEASUREMENTS; SPACE VECTOR PULSE WIDTH MODULATION;

MOSFET DEVICES;

EID: 84949747332     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922906     Document Type: Conference Paper

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