Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 63-66

  Semmelroth, K ^a   Schmid, F ^a   Karg, D ^a   Pensl, G ^a   Maier, M ^b   Greulich Weber, S ^c   Spaeth, J M ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

High n Type Conductivity; Low Bulk Resistance; Modified Lely Method; Phosphorus Donors; Physical Vapor Transport

Indexed keywords

DOPING (ADDITIVES); PHOSPHORUS; SINGLE CRYSTALS; SUBLIMATION;

SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 0242413827     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.63     Document Type: Conference Paper

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