Furnace and rapid thermal crystallization of amorphous GexSi1-x and Si for thin film transistors

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 152-156

  Rem, J B ^a   De Leuw, M C V ^a   Holleman, J ^a   Verweij, J F ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Amorphous materials; Crystallization; Germanium; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; NUCLEATION; SILICON ALLOYS; SINGLE CRYSTALS; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

FURNACE CRYSTALLIZATION;

AMORPHOUS SILICON;

EID: 0031097906     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09355-8     Document Type: Article

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