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Volumn 1, Issue 3, 2002, Pages 276-283

Pattern transfer processes for 157-nm lithography

Author keywords

157 nm lithography; Bi layer process; Fluoropolymer; Gate fabrication; Hard mask; Pattern transfer

Indexed keywords


EID: 33845271847     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1507336     Document Type: Article
Times cited : (1)

References (20)
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    • Schmalijohann, D.1    Bae, Y.C.2    Weibel, G.L.3    Hamad, A.H.4    Ober, C.K.5
  • 13
    • 0031362580 scopus 로고    scopus 로고
    • Roles of surface functional groups on TiN and SiN substrates in resist pattern deformations
    • R. Yamanaka, T. Mine, T. Tanaka, and T. Terasawa, "Roles of surface functional groups on TiN and SiN substrates in resist pattern deformations," J pa. J. Appl. Phys., Part 1 36, 7620-7624 (1997).
    • (1997) J pa. J. Appl. Phys. , vol.36 , Issue.PART 1 , pp. 7620-7624
    • Yamanaka, R.1    Mine, T.2    Tanaka, T.3    Terasawa, T.4
  • 14
    • 0026477334 scopus 로고
    • Characteristics of a chemically amplified silicone-based negative resist (CSNR) in KrF excimer laser lithography
    • Y. Kawai, A. Tanaka, H. Ban, J. Nakamura, and T. Matsuda, "Characteristics of a chemically amplified silicone-based negative resist (CSNR) in KrF excimer laser lithography," Proc. SPIE 1672, 56-65 (1992).
    • (1992) Proc. SPIE , vol.1672 , pp. 56-65
    • Kawai, Y.1    Tanaka, A.2    Ban, H.3    Nakamura, J.4    Matsuda, T.5
  • 18
    • 0001286830 scopus 로고    scopus 로고
    • Integrated silylation and dry developmentof resist for sub-0.15μ top surface imaging applications
    • J. Vertommen, W. Klippert, A.-M. Goethals, and F. V. Roey, "Integrated silylation and dry developmentof resist for sub-0.15μ top surface imaging applications," J. Photopolym. Sci. Technol. 11, 597-612 (1998).
    • (1998) J. Photopolym. Sci. Technol. , vol.11 , pp. 597-612
    • Vertommen, J.1    Klippert, W.2    Goethals, A.-M.3    Roey, F.V.4
  • 20
    • 0034584043 scopus 로고    scopus 로고
    • Process characterization of bilayer silylation process for 193-nm lithography
    • H. Watanabe, I. Satou, and T. Itani, "Process characterization of bilayer silylation process for 193-nm lithography," J. Photopolym. Sci. Technol. 13, 545-550 (2000).
    • (2000) J. Photopolym. Sci. Technol. , vol.13 , pp. 545-550
    • Watanabe, H.1    Satou, I.2    Itani, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.