Roles of surface functional groups on TiN and SiN substrates in resist pattern deformations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7620-7624

  Yamanaka, Ryoko ^a   Mine, Toshiyuki ^a   Tanaka, Toshihiko ^a   Terasawa, Tsuneo ^a  

^a HITACHI LTD   (Japan)

Author keywords

Chemical amplification resist; Lithography; Pattern deformation; SiN; TiN

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DESORPTION; SILICON NITRIDE; THERMOOXIDATION; TITANIUM NITRIDE;

CHEMICALLY AMPLIFIED RESISTS; PATTERN DEFORMATIONS;

PHOTORESISTS;

EID: 0031362580     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7620     Document Type: Article

References (8)

1. R. Yamanaka, T. Hattori, T. Mine and T. Tanaka: Jpn. J. Appl. Phys. 34 (1995) 6794.
2. O. Suga, H. Yamaguchi and S. Okazaki: Microelectron. Eng. 13 (1991) 65.
3. S. Mori, T. Fukushima and Y. Sato: Jpn. J. Appl. Phys. 35 (1996) 6495.
4. J. S. Petersen, T. H. Fedynyshyn and J. W. Thackeray: J. Photopolym. Sci. Technol. 8 (1995) 571.
5. J. A. Pople and P. A. Dobosh: J. Chem. Phys. 47 (1967) 2029.
6. M. C. Zerner, G. H. Loew, R. F. Kirchner and U. T. MuellerWesterhoff: J. Am. Chem. Soc. 102 (1980) 589.
7. C. Ernsberger, J. Nickerson, and T. Smith: J. Vac. Sci. Technol. A 4 (1986) 2784.
8. H. G. Tompkins and P. W. Deal: J. Vac. Sci. Technol. B 11 (1993) 727.