Resist materials for 157-nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue I, 2001, Pages 371-378

  Toriumi, M ^a   Ishikawa, S ^a   Miyoshi, S ^a   Naito, T ^a   Yamazaki, T ^a   Watanabe, M ^a   Itani, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

157 nm lithography; Aqueous base solubility; Chemical amplification; Fluoropolymer; Photoresist

Indexed keywords

DRY ETCHING; FLUORINE CONTAINING POLYMERS; LIGHT ABSORPTION; NANOTECHNOLOGY; SENSITIVITY ANALYSIS;

CHEMICAL AMPLIFICATION; SINGLE LAYER RESISTS;

PHOTORESISTS;

EID: 0034755512     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436868     Document Type: Conference Paper

References (16)

1. Lithography with 157 nm lasers
2. Outlook for 157-nm resist design
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6. Vacuum ultraviolet spectra of fluorocompounds for 157 nm lithography
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8. Polymers for 157 nm photoresist applications: A progress report
9. Design strategies for 157 nm single-layer photoresists: Lithographic evaluation of a poly(α-trifluoromethyl vinyl alcohol) copolymer
10. New materials for 157 nm photoresists: Characterization and properties
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12. Dry etch resistance of organic materials
13. Dry etch resistance of metal-free and halogen-substituted resist materials
14. Impact of photoacid generator structure on DUV resist performance
15. DUV positive resist system designed for micrascan use