Epitaxial growth and strain relaxation of MgO thin films on Si grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2586-2591

  Niu, F ^a   Meier, A L ^a   Wessels, B W ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SILICON WAFERS; STRESS RELAXATION; X RAY DIFFRACTION;

BUFFER LAYER; COHERENT ISLANDS; STRANSKI KRASTANOV TRANSITION; THERMAL MISMATCH;

THIN FILMS;

EID: 33845255454     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2362759     Document Type: Article

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