SCOPUS 정보 검색 플랫폼

Volumn 86, Issue 20, 2005, Pages 1-3

Single-piece polycrystalline silicon accumulation/depletion/inversion model with implicit/explicit surface-potential solutions

(6) Chiah, S B a Zhou, X a Chandrasekaran, K a Shangguan, W Z a See, G H a Pandey, S M b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FERMI LEVEL; FIELD EFFECT TRANSISTORS; FUNCTIONS; MATHEMATICAL MODELS; MOSFET DEVICES; POISSON EQUATION; POLYCRYSTALLINE MATERIALS;

INVERSION MODELS; POLY-ACCUMULATION EFFECT (PAE); POLY-INVERSION EFFECT (PIE); SURFACE-POTENTIAL SOLUTIONS;

POLYSILICON;

EID: 20844442956 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1926420 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.