Strain and lattice engineering for Ge FET devices

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 423-436

  Bedell, S W ^a   Reznicek, A ^a   Fogel, K ^a   Ott, J ^a   Sadana, D K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Crystal defects; GeOI; Germanium; SGOI; Strain; X ray diffraction

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; GERMANIUM; POISSON RATIO; SINGLE CRYSTALS; STRAIN; X RAY DIFFRACTION;

GEOI; HIGH-TEMPERATURE OXIDATION; LATTICE ENGINEERING; MATERIAL DEVELOPMENT;

FIELD EFFECT TRANSISTORS;

EID: 33845203189     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.001     Document Type: Article

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