Development and design kit integration of a scalable and statistical high current model for advanced SiGe HBTs

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Volumn 3, Issue , 2006, Pages 729-734

  Malladi, Ramana M ^a   Newton, Kim M ^a   Schroter, Michael ^b  

^a IBM   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE EMITTER VOLTAGE; CURRENT GAIN; DISTORTION CHARACTERISTICS; NOISE PARAMETERS;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; STATISTICAL METHODS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33845195691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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