A computationally efficient physics-based compact bipolar transistor model for circuit design - Part II: Parameter extraction and experimental results

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 287-295

  Frégonèse, Sébastien ^a   Lehmann, Steffen ^b   Zimmer, Thomas ^a   Schroter, M ^b,c   Céli, Didier ^d   Ardouin, Bertrand ^e   Beckrich, Helene ^d   Brenner, Pietro ^f   Kraus, Wolfgang ^g  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF SAN DIEGO   (United States)

^d STMICROELECTRONICS   (France)

^e XMOD TECHNOLOGIES   (France)

^f INFINEON TECHNOLOGIES AG   (Germany)

^g Atmel Germany GmbH   (Germany)

Author keywords

Analog high frequency circuit design; Bipolar transistors; Compact transistor modeling; HICUM; Parameter extraction

Indexed keywords

BIPOLAR TRANSISTORS; CALCULATIONS; CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SEMICONDUCTOR JUNCTIONS;

ANALOG HIGH-FREQUENCY CIRCUIT DESIGN; COMPACT TRANSISTOR MODELING; PARAMETER EXTRACTION; SPICE GUMMEL-POON MODEL (SGPM);

INTEGRATED CIRCUIT LAYOUT;

EID: 31744434155     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862246     Document Type: Article

References (16)

1. M. Schroter, S. Lehmann, S. Fregonese, and T. Zimmer, "A computationally efficient physics-based compact bipolar transistor model for circuit design - Part I: Model formulation," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 279-286, Feb. 2006.
2. S. Lehmann and M. Schroter. (2005) HICUM/Level0. [Online]. Available: http://www.iee.et.tu-dresden.de/iee/eb
3. M. Schroter, H.-M. Rein, W. Rabe, R. Reimann, H.-J. Wassener, and A. Koldehoff, "Physics- and process-based bipolar transistor modeling for integrated circuit design," IEEE J. Solid-State Circuits, vol. 34, no. 11, pp. 1136-1149, Nov. 1999.
4. D. Berger, D. Celi., M. Schroter, M. Malorny, T. Zimmer, and B. Ardouin, "HICUM parameter extraction methodology for a single transistor geometry," in Proc. IEEE BCTM; Monterey, CA, 2002, pp. 116-119.
5. D. Berger, N. Gambetta, D. Celi, and C. Dufaza, "Extraction of the BC capacitance splitting along the base resistance using HF measurements," in Proc. IEEE BCTM, 2000, pp. 180-183.
6. B. Ardouin, T. Zimmer, H. Mnif, and P. Fouillat, "Direct method for bipolar BE and BC capacitance splitting using high frequency measurements," in Proc. IEEE BCTM, Minneapolis, MN, 2001, pp. 114-117.
7. D. Berger and D. Celi, "HICUM parameter extraction methodology for a single transistor geometry," presented at the Proc. Second Eur. HICUM Workshop, Dresden, Germany, Jun. 2002.
8. H.-M. Rein and M. Schrẗer, "Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions," Solid State Electron., vol. 34, pp. 301-308, 1991.
9. T. Nakadai and K. Hashimoto, "Measuring the base resistance of bipolar transistors," in Proc. IEEE BCTM, Minneapolis, MN, 1991, pp. 200-203.
10. B. Ardouin, T. Zimmer, D. Berger, D. Celi, H. Mnif, T. Burdeau, and P. Fouillat., "Transit time parameter extraction for the HICUM bipolar compact model," in Proc. IEEE BCTM, Minneapolis, MN, 2001, pp. 106-109.
11. M. Malorny, M. Schröter, D. Céli, and D. Berger, "An improved method for determining the transit time of Si/SiGe bipolar transistors," in Proc. IEEE BCTM, 2003, pp. 229-232.
12. M. Schroter, S. Lehmann, H. Jiang, and S. Komarow, "HICUM/Level0 - A simplified compact bipolar transistor model," in Proc. IEEE BCTM, 2002, pp. 112-115.
13. H. Baudry, B. Szelag, F. Deliglise, M. Laurens, J. Mourier, F. Saguin, G. Troillard, A. Chantre, and A. Monroy., "High performance 0.25 μm SiGe and SiGe:C HBT's using non selective epitaxy," in Proc. IEEE BCTM, Minneapolis, MN, 2001, pp. 52-55.
14. P. Chevalier, C. Fellous, L. Ruhaldol, D. Dutartre, M. Laurens, T. Jagueneaul, F. Leverdl, S. Bord, C. Richar, D. Lenoble, J. Bonnouvrier, M. Martyl, A. Perrotin, D. Gloria, R. Saguin, B. Barbalat, R. Beerken, N. Zerounian, F. Anie, and A. Chantre, "230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technlogy," in Proc. IEEE BCTM, 2004, pp. 225-228.
15. W. Klein and B.-U. H. Klepser, "75 GHz bipolar production technology for the 21st century," in Proc. Eur. Solid-State Device Res. Conf., Leuven, Belgium, 1999, pp. 88-94.
16. J. Berutgen, A. Schueppen, P. Maier, M. Tortschanoff, W. Kraus, and M. Averweg, "SiGe technology bears fruits," Mater. Sci. Eng.: B, vol. 89, no. 1, pp. 13-20(8), Feb. 2002.