-
1
-
-
0002818770
-
Accurate measurement of emitter and collector series resistances in transistors,"
-
vol. 45, p. 90, 1957.
-
B. Kulke and S. L. Miller, Accurate measurement of emitter and collector series resistances in transistors," Proc. IRE (Lett.), vol. 45, p. 90, 1957.
-
Proc. IRE (Lett.)
-
-
Kulke, B.1
Miller, S.L.2
-
2
-
-
0041675191
-
Measurement of emitter and collector series resistances,"
-
19, pp. 692-693, 1972.
-
L. J. Giacoletto, Measurement of emitter and collector series resistances," IEEE Trans. Electron Devices, Vol. ED19, pp. 692-693, 1972.
-
IEEE Trans. Electron Devices, Vol. ED
-
-
Giacoletto, L.J.1
-
3
-
-
0019876225
-
New technique for determination of static collector and emitter series resistances of bipolar transistors,"
-
vol. 17, no. 14, pp. 503-504, 1981.
-
W. Filensky and H. Beneking, New technique for determination of static collector and emitter series resistances of bipolar transistors," Electron. Lett., vol. 17, no. 14, pp. 503-504, 1981.
-
Electron. Lett.
-
-
Filensky, W.1
Beneking, H.2
-
4
-
-
0015490526
-
Characterization and measurement of the base and emitter resistances of bipolar transistors,"
-
7, pp. 492-498, 1972.
-
W. M. C. Sansen and R. G. Meyer, Characterization and measurement of the base and emitter resistances of bipolar transistors," IEEE J. Solid-State Circuits, Vol. SC7, pp. 492-498, 1972.
-
IEEE J. Solid-State Circuits, Vol. SC
-
-
Sansen, W.M.C.1
Meyer, R.G.2
-
5
-
-
0021406709
-
Method for determining the emitter and base resistances of bipolar transistors,"
-
31, pp. 409-412, 1984.
-
T. H. Ning and D. D. Tang, Method for determining the emitter and base resistances of bipolar transistors," IEEE Trans. Electron Devices, Vol. ED31, pp. 409-412, 1984.
-
IEEE Trans. Electron Devices, Vol. ED
-
-
Ning, T.H.1
Tang, D.D.2
-
7
-
-
0029248796
-
Precise extraction of emitter resistance from an improved floating collector measurement,"
-
vol. 42, pp. 266-273, 1995.
-
K. Morizuka, O. Hidaka, and H. Mochizuki, Precise extraction of emitter resistance from an improved floating collector measurement," IEEE Trans. Electron Devices, vol. 42, pp. 266-273, 1995.
-
IEEE Trans. Electron Devices
-
-
Morizuka, K.1
Hidaka, O.2
Mochizuki, H.3
-
8
-
-
0022083515
-
A unified model for bipolar transistors including quasisaturation effects,"
-
32, pp. 1103-1113, 1985.
-
G. M. Kuli, L. W. Nagel, S. Lee, P. Lloyd, E. J. Prendergast, and H. Dirks, A unified model for bipolar transistors including quasisaturation effects," IEEE Trans. Electron Devices, Vol. ED32, pp. 1103-1113, 1985.
-
IEEE Trans. Electron Devices, Vol. ED
-
-
Kuli, G.M.1
Nagel, L.W.2
Lee S3
Lloyd, P.4
Prendergast, E.J.5
Dirks, H.6
-
9
-
-
0014780722
-
An integral charge control model of bipolar transistors,"
-
vol. 49, no. 5, pp. 827-852, 1970.
-
H. K. Gummel and H. C. Poon, An integral charge control model of bipolar transistors," Bell Syst. Tech. J., vol. 49, no. 5, pp. 827-852, 1970.
-
Bell Syst. Tech. J.
-
-
Gummel, H.K.1
Poon, H.C.2
-
10
-
-
0030270762
-
VBIC95, the vertical bipolar intercompany model,"
-
vol. 31, pp. 1476-1482, 1996.
-
C. C. McAndrew, J. A. Seitchik, D. F. Browers, M. D. Dünn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D. J. Roulston, M. Schröter, P. van Wijnen, and L. F. Wagner, VBIC95, the vertical bipolar intercompany model," IEEE J. Solid-State Circuits, vol. 31, pp. 1476-1482, 1996.
-
IEEE J. Solid-State Circuits
-
-
McAndrew, C.C.1
Seitchik, J.A.2
Browers, D.F.3
Dünn, M.D.4
Foisy, M.5
Getreu, I.6
McSwain, M.7
Moinian, S.8
Parker, J.9
Roulston, D.J.10
Schröter, M.11
Van Wijnen, P.12
Wagner, L.F.13
-
11
-
-
0000190148
-
Minority carrier reflecting properties of semiconductor high-low junctions,"
-
vol. 18, pp. 715-716, 1974.
-
J. R. Hauser and P. M. Dunbar, Minority carrier reflecting properties of semiconductor high-low junctions," Solid-State Electron., vol. 18, pp. 715-716, 1974.
-
Solid-State Electron.
-
-
Hauser, J.R.1
Dunbar, P.M.2
-
12
-
-
33748621800
-
Statistics of the recombination of holes and electrons,"
-
vol. 87, no. 5, pp. 835-842, 1952.
-
W. Shockley and W. T. Read, Statistics of the recombination of holes and electrons," Phys. Rev., vol. 87, no. 5, pp. 835-842, 1952.
-
Phys. Rev.
-
-
Shockley, W.1
Read, W.T.2
-
13
-
-
0026899612
-
A unified mobility model for device simulation-I. Model equations and concentration dependence,"
-
vol. 35, no. 7, pp. 953-959, 1992.
-
D. B. M. Klaassen, A unified mobility model for device simulation-I. Model equations and concentration dependence," Solid-State Electron., vol. 35, no. 7, pp. 953-959, 1992.
-
Solid-State Electron.
-
-
Klaassen, D.B.M.1
-
14
-
-
0019045364
-
Emitter effects in shallow bipolar devices: Measurements and consequences,"
-
27, pp. 949-955, 1980.
-
A. W. Wieder, Emitter effects in shallow bipolar devices: measurements and consequences," IEEE Trans. Electron Devices, Vol. ED27, pp. 949-955, 1980.
-
IEEE Trans. Electron Devices, Vol. ED
-
-
Wieder, A.W.1
-
15
-
-
18144436643
-
SiGe base bipolar technology with 74 GHz /max and 11 ps gate delay," in
-
95 Tech. Dig., 1995, pp. 739-742.
-
T. F. Meister, H. Schäfer, M. Franosch, W. Molzer, K. Aufinger, U. Scheler, C. Walz, M. Stolz, S. Boguth, and J. Bock, SiGe base bipolar technology with 74 GHz /max and 11 ps gate delay," in IEDM'95 Tech. Dig., 1995, pp. 739-742.
-
IEDM'
-
-
Meister, T.F.1
Schäfer, H.2
Franosch, M.3
Molzer, W.4
Aufinger, K.5
Scheler, U.6
Walz, C.7
Stolz, M.8
Boguth, S.9
Bock, J.10
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