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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 6973-6982

Studies of Switching Kinetics in Ferroelectric Thin Films

(6) Jiang, Anquan a Dawber, Matthew a Scott, James F a Wang, Can b Migliorato, Piero a Gregg, Marly c

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

c QUEEN'S UNIVERSITY BELFAST (United Kingdom)

Author keywords

Barium strontium titanate; Dielectric constants; Ferroelectrics; Lead zirconate titanate; Strontium bismuth tantalate; Thin films

Indexed keywords

CERAMIC PRODUCTS; COERCIVE FORCE; ELECTRIC POTENTIAL; ELECTRODES; FERROELECTRIC MATERIALS; HYSTERESIS; MATHEMATICAL MODELS; PERMITTIVITY; POLARIZATION; SWITCHING; THERMAL EFFECTS; ZINC ALLOYS;

ELECTRON SCREENING; ROOM TEMPERATURE;

FERROELECTRIC THIN FILMS;

EID: 1642536395 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.6973 Document Type: Article

Times cited : (37)

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