Modelling polarisation of ferroelectric SBT capacitors including temperature dependence

Electronics Letters

Volumn 37, Issue 20, 2001, Pages 1216-1217

  Schultz, I ^a   Goebel, H ^a   Ullmann, M ^a  

^a HELMUT SCHMIDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FERROELECTRIC DEVICES; MAGNETIC HYSTERESIS; THERMAL EFFECTS; THIN FILM DEVICES;

FERROELECTRIC THIN FILM CAPACITORS;

CAPACITORS;

EID: 0035959863     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010829     Document Type: Article

References (8)

1. Computationally efficient ferroelectric capacitor model for circuit simulation
2. A model for switching and hysteresis in ferroelectric ceramics
3. Distribution function integral method for modeling ferroelectric devices
4. A family of ferroelectric bismuth compounds