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Volumn 50, Issue 4, 2006, Pages 606-612

A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130 nm generation and beyond

Author keywords

FeRAM; Ferroelectrics; Memory; PZT; SrRuO3

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); POLARIZATION; STRONTIUM COMPOUNDS;

EID: 33646532640     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.015     Document Type: Article
Times cited : (17)

References (13)
  • 1
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  • 2
    • 4544353280 scopus 로고    scopus 로고
    • Kanaya H, Tomioka K, Matsushita T, Omura M, Ozaki T, Kumura Y, et al. In: Symposium on VLSI technologies technical digest; 2004. p. 150.
  • 4
    • 33745147578 scopus 로고    scopus 로고
    • Yoo DC, Bae BJ, Lim JE, Im DH, Park SO, Kim HS, et al. In: Symposium on VLSI technologies technical digest; 2005. p. 100.
  • 5
    • 33646534248 scopus 로고    scopus 로고
    • Takashima D, Kunishima I. In: JSSCC; 1998. p. 787.
  • 6
    • 33646527657 scopus 로고    scopus 로고
    • Itokwa H, Natori K, Yamazaki S, Beitel G, Yamakawa K. Extended abstract of SSDM; 2003. p. 40.
  • 10
    • 0033281315 scopus 로고    scopus 로고
    • Takashima D, Oowaki Y, Kunishima I. In: Symposium on VLSI circuits technical digest; 1999. p. 103.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.