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Volumn 50, Issue 4, 2006, Pages 606-612
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A SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process for embedded memory of 130 nm generation and beyond
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Author keywords
FeRAM; Ferroelectrics; Memory; PZT; SrRuO3
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Indexed keywords
CAPACITORS;
CMOS INTEGRATED CIRCUITS;
DATA STORAGE EQUIPMENT;
FERROELECTRIC MATERIALS;
INTERFACES (MATERIALS);
POLARIZATION;
STRONTIUM COMPOUNDS;
FERAM;
MEMORY;
PZT;
SRRUO3;
SOLID STATE DEVICES;
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EID: 33646532640
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2006.03.015 Document Type: Article |
Times cited : (17)
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References (13)
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