On the crucial role of the insulator-semiconductor interface in organic thin-film transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6336, Issue , 2006, Pages

  Horowitz, Gilles ^a   Mottaghi, Mohammad ^a   Lang, Philippe ^a   Rodriguez, Fernand ^a   Yassar, Abderrahim ^a   Lenfant, Stéphane ^b   Vuillaume, Dominique ^b  

^a UNIVERSITÉ PARIS DIDEROT   (France)

^b UNIV LILLE   (France)

Author keywords

e beam lithography; Gate voltage dependent mobility; Pentacene; Self assembled monolayers

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; OLEFINS; SELF ASSEMBLY; THIN FILM TRANSISTORS;

CURRENT-VOLTAGE CHARACTERISTICS; GATE-VOLTAGE DEPENDENT MOBILITY; ORGANIC THIN-FILM TRANSISTORS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 33751419565     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.680345     Document Type: Conference Paper

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