Heteroepitaxial growth of InN on Si(111) using a GaAs intermediate layer

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 149-154

  Yamamoto, Akio ^a   Yamauchi, Yasuyuki ^a   Ohkubo, Mitsugu ^a   Hashimoto, Akihiro ^a   Saitoh, Tohru ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b Opto electronics Technol Res Lab   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES;

GALLIUM NITRIDE (GAN) LAYER; GROWTH RATE; HETEROEPITAXIAL GROWTH; HEXAGONAL LATTICE; INDIUM NITRIDE (INN) LAYER; THERMAL NITRIDATION;

SEMICONDUCTING FILMS;

EID: 0031075831     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00156-6     Document Type: Article

References (8)

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