B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 46-49

  Di Marino, M ^a   Napolitani, E ^a   Mastromatteo, M ^a   Bisognin, G ^a   De Salvador, D ^a   Carnera, A ^a   Mirabella, S ^b   Impellizzeri, G ^b   Priolo, F ^b   Graoui, H ^c   Foad, M A ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c APPLIED MATERIALS INC   (United States)

Author keywords

Activation; Boron; Carbon; Co implantation; Diffusion; Post annealing; Ultra shallow junctions

Indexed keywords

ANNEALING; BORON; DIFFUSION; SEMICONDUCTOR JUNCTIONS; SILICA; THERMOANALYSIS;

CO IMPLANTATION; ISOCHRONAL; POST-ANNEALING; RAPID THERMAL ANNEALING (RTA); ULTRA SHALLOW JUNCTIONS (USJ);

CARBON;

EID: 33751335304     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.011     Document Type: Article

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