Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates

Applied Physics Letters

Volumn 82, Issue 3, 2003, Pages 442-444

  Zhai, Jiwei ^a   Chen, Haydn ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRICITY; LANTHANUM COMPOUNDS; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SOL-GELS;

POLARIZATION-VOLTAGE CHARACTERISTICS;

THIN FILMS;

EID: 0037455204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1539928     Document Type: Article

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