Ferroelectric behaviors and charge carriers in Nd-doped Bi 4Ti 3O 12 thin films

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Gao, X S ^a   Xue, J M ^a   Wang, J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELDS; FERROELECTRIC BEHAVIORS; POSTANNEALING TEMPERATURES; SPACE-CHARGE RELAZATIONS;

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; CHARGE CARRIERS; FERROELECTRICITY; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

THIN FILMS;

EID: 13644279563     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834986     Document Type: Article

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