A 3.4 eV potential barrier height in Schottky diodes on boron-doped diamond thin films

Diamond and Related Materials

Volumn 13, Issue 2, 2004, Pages 292-295

  Craciun, M ^a   Saby, Ch ^a   Muret, P ^a   Deneuville, A ^a  

^a CNRS   (France)

Author keywords

Diamond; Diode; Schottky barrier; Series resistance

Indexed keywords

BORON; DOPING (ADDITIVES); EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES; SILVER; X RAY PHOTOELECTRON SPECTROSCOPY;

POTENTIAL BARRIERS;

DIAMOND FILMS;

DIAMOND;

EID: 1542348281     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.10.012     Document Type: Article

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