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Volumn 389-393, Issue , 2002, Pages 1169-1172
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Reverse characteristics of a 4H-SiC schottky barrier diode
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Author keywords
Barrier lowering; Device simulation; Field emission; JBS; Schottky barrier diode; SiC; Thermionic field emission; Tunneling current
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Indexed keywords
DIODES;
ECONOMIC AND SOCIAL EFFECTS;
ELECTRIC FIELDS;
ELECTRON TUNNELING;
FIELD EMISSION;
LEAKAGE CURRENTS;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
COMPUTER SIMULATION;
THERMIONIC EMISSION;
BARRIER LOWERING;
DEVICE SIMULATIONS;
JUNCTION BARRIER SCHOTTKY DIODES;
REVERSE CHARACTERISTICS;
SCHOTTKY BARRIER DIODE(SBD);
SCHOTTKY BARRIER HEIGHTS;
THERMIONIC FIELD EMISSION;
TUNNELING CURRENT;
SCHOTTKY BARRIER HEIGHT (SBH);
SEMICONDUCTOR METAL BOUNDARIES;
SCHOTTKY BARRIER DIODES;
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EID: 0036433884
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.1169 Document Type: Conference Paper |
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Times cited : (115)
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References (4)
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