Photoelectric properties of p+-n junctions based on 4H-SiC ion-implanted with aluminum

Semiconductors

Volumn 36, Issue 6, 2002, Pages 706-709

  Violina, G N ^a   Kalinina, E V ^b   Kholujanov, G F ^b   Onushkin, G A ^b   Kossov, V G ^c   Yafaev, R R ^c   Hallen A ^d   Konstantinov, A O ^e  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c Elektron Optronik   (Russian Federation)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^e ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036624175     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1485675     Document Type: Article

References (12)

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