Demonstration of 4H-SiC visible-blind EUV and UV detector with large detection area

Electronics Letters

Volumn 41, Issue 21, 2005, Pages 1192-1193

  Xin, X ^a   Yan, F ^b   Koeth, T W ^c   Joseph, C ^c   Hu, J ^a   Wu, J ^a   Zhao, J H ^a  

^a RUTGERS UNIVERSITY   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c Rutgers   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; PHOTODETECTORS; QUANTUM EFFICIENCY; ULTRAVIOLET DETECTORS;

ELECTRON HOLES; EXTREME ULTRAVIOLET (EUV); SPECTRAL QUANTUM EFFICIENCY;

SILICON CARBIDE;

EID: 27644494033     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052977     Document Type: Article

References (3)

1. Xin, X., Yan, F., Sun, X., Alexandrove, P., Stahle, C.M., Hu, J., Matsumura, M., Li, X., Weiner, M., and Zhao, H J.: 'Demonstration of 4H-SiC UV single photon counting avalanche photodiode', Electron. Lett., 2005, 41, (4), pp. 212-214
2. Itoh, A., and Matsunami, H.: 'Analysis of Schottky barrier heights of metal/SiC contacts and its possible application to high-voltage rectifying devices', Phys. Status. Solidi. A, 1997, 162, pp. 389-340
3. Yan, F., Xin, X., Aslam, S., Zhao, Y., Franz, D., Zhao, J., and Weiner, M.: '4H-SiC UV photo detectors with large area and very high specific detectivity', J. Quantum Electron., 2004, 40, (9), pp. 1315-1320