Processing and properties of ferroelectric Pb(Zr,Ti)O3/silicon carbide field-effect transistor

Integrated Ferroelectrics

Volumn 57, Issue , 2003, Pages 1221-1231

  Koo, Sang Mo ^a   Khartsev, S I ^a   Zetterling, C M ^a   Grishin, A M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

Field effect transistor; Pulsed laser deposition; PZT; Silicon carbide

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; PULSED LASER DEPOSITION; SILICON CARBIDE; THIN FILMS; X RAY DIFFRACTION;

BAND GAP; BUFFER LAYERS; SWEEP RATE; TRAP DENSITY;

GATES (TRANSISTOR);

EID: 33750927277     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390259704     Document Type: Article

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