Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal-ferroelectric-metal-insulator-semiconductor structure

Journal of Applied Physics

Volumn 85, Issue 10, 1999, Pages 7471-7476

  Ashikaga, Kinya ^a   Ito, Toshio ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000731077     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369381     Document Type: Article

References (9)

1. Y. Nakao, T. Nakamura, A. Kamisaka, and H. Takasu, Integr. Ferroelectr. 6, 23 (1995).
2. Y. Katoh, S. Fujieda, Y. Hayashi, and T. Kunio, Digest of 1996 Symposium on VLSI Technology, 1996, p. 56.
3. I. P. Batra, P. Wurfel, and B. D. Silverman, Phys. Rev. B 8, 3257 (1973).
4. Y. Watanabe and D. Sawamura, Jpn. J. Appl. Phys., Part 1 36, 6162 (1997).
5. Y. Watanabe, M. Tanamura, and Y. Matsumoto, Jpn. J. Appl. Phys., Part 1 35, 1564 (1996).
6. I. Koiwa, K. Tani, J. Mita, and T. Iwabuchi, Jpn. J. Appl. Phys., Part 1 37, 192 (1998).
7. S. L. Miller, R. D. Nasby, J. R. Schwank, M. S. Roders, and P. V. Dressendorfer, J. Appl. Phys. 68, 6463 (1990).
8. E. Tokumitsu, T. Shimamura, and H. Ishiwara, Integr. Ferroelectr. 15, 137 (1997).
9. J. F. Scott, C. A. Araujo, B. M. Melnick, L. D. McMillan, and R. Zuleeg, J. Appl. Phys. 70, 382 (1991).