Electrical characteristics of metal-ferroelectric (PbZrxTi1-xO3)-insulator (Ta2O5)-silicon structure for nonvolatile memory applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2848-2850

  Sze, Chi Yuan ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRACK PROPAGATION; DIFFUSION; ELECTRIC CONDUCTIVITY OF SOLIDS; FERROELECTRIC DEVICES; NONVOLATILE STORAGE; SEMICONDUCTING LEAD COMPOUNDS; TANTALUM COMPOUNDS; VOLTAGE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

LEAD-ZIRCONATE-TITANATE (PZT); METAL-FERROELECTRIC-INSULATOR-SILICON (MFIS);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034315087     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319698     Document Type: Article

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