Improving the ambipolar behavior of schottky barrier carbon nanotube field effect transistors

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 429-432

  Pourfath, M ^a   Ungersboeck, E ^a   Gehring, A ^a   Cheong, B H ^b   Park, W ^b   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CARBON NANOTUBES; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; FABRICATION; SCHOTTKY BARRIER DIODES;

AMBIPOLAR BEHAVIOR; BALLISTIC TRANSPORT; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNTFET); CARRIER INJECTION; HOLE INJECTION;

GATES (TRANSISTOR);

EID: 17644388153     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, "Carbon Nanotubes as Schottky Barrier Transistors," Physical Review Letters, vol. 89, no. 10, pp. 106801-4, 2002.
2. B. M. Kim, T. Brintlinger, E. Cobas, H. Zheng, M. Fuhrer, Z.Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, "High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates," Appl.Phys.Lett., vol. 84, no. 11, pp. 1946-1948, 2004.
3. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic Carbon Nanotube Field-Effect Transistors," Letters to Nature, vol. 424, pp. 654-657, 2003.
4. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. Chan, J. Tersoff, and P. Avouris, "Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes," Physical Review Letters, vol. 87, no. 25, pp. 256805-4, 2001.
5. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S.Wind, and P. Avouris, "Field-Modulated Carrier Transport in Carbon Nanotube Transistors," Physical Review Letters, vol. 89, no. 12, pp. 126801-4, 2002.
6. M. Radosavljevic, S. Heinze, J. Tersoff, and P. Avouris, "Drain Voltage Scaling in Carbon Nanotube Transistors," Appl.Phys.Lett., vol. 83, no. 12, pp. 2435-2437, 2003.
7. S. Heinze, J. Tersoff, and P. Avouris, "Electrostatic Engineering of Nanotube Transistors for Improved Performance," Appl.Phys.Lett., vol. 83, no. 24, pp. 5038-5040, 2003.
8. S. Heinze, M. Radosavljevic, J. Tersoff, and P. Avouris, "Unexpected Scaling of the Performance of Carbon Nanotube Schottky-Barrier Transistors," Physical Review B, vol. 68, no. 23, pp. 235418-5, 2003.
9. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge University Press, 1995.
10. F. Léonard and J. Tersoff, "Novel Length Scales in Nanotube Devices," Physical Review Letters, vol. 83, no. 24, pp. 5174-5177, 1999.
11. T. Nakanishi, A. Bachtold, and C. Dekker, "Transport Through the Interface Between a Semiconducting Carbon Nanotube and a Metal Electrode," Physical Review B, vol. 66, no. 7, pp. 073307-4, 2002.
12. J. W. Mintmire and C. T. White, "Universal Density of States for Carbon Nanotubes," Physical Review Letters, vol. 81, no. 12, pp. 2506-2509, 1998.
13. R. Sabelka and S. Selberherr, "A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures," Microelectronics Journal, vol. 32, no. 2, pp. 163-171, 2001.
14. W. Choi, J. Chu, K. Jeong, E. Bae, and J. Lee, "Ultrahigh-Density Nanotransistors by Using Selectively Grown Vertical Carbon Nanotubes," Appl.Phys.Lett., vol. 79, no. 22, pp. 3696-3698, 2001.
15. E. Ungersboeck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, and W. B. Choi, "Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors," Proceedings ESSDERC 2003, pp. 411-414, 2003.