Influence of the self-buffer layer on ZnO film grown by atmospheric metal organic chemical vapor deposition

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 1527-1531

  Wang, Jinzhong ^c   Sallet, Vincent ^a   Amiri, Gaëlle ^a   Rommelluere, Jean François ^a   Lusson, Alain ^a   Lewis, John E ^b   Galtier, Pierre ^a   Fortunato, E ^c   Martins, R ^c   Gorochov, Ouri ^a  

^a Centre National de la Recherche Scientifique   (France)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

Luminescence; Raman scanning; X ray diffraction; Zinc oxide

Indexed keywords

ANNEALING; EXCITONS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY;

ANNEALING TEMPERATURE; DONOR BINDING EXCITON; SELF-BUFFER LAYER;

ZINC OXIDE;

EID: 33750842088     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.04.027     Document Type: Article

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