The low frequency noise in HFETs estimates the effect of electrical stress

Microelectronics Reliability

Volumn 40, Issue 11, 2000, Pages 1959-1963

  Marinov, Ognian ^a  

^a TECHNICAL UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

ELECTRICAL STRESS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

MICROELECTRONICS;

EID: 0034325629     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00065-2     Document Type: Article

References (8)

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7. Farmaskis FV, Brini J, Kamarinos G, Angelis CT, Dimitriadis CA, Miyasaka M. Evolution of low frequency noise during hot carrier stress in excimer lazer annealed n-channel polysilicon thin film transistors (TFTs). The Fifteenth International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF), 23-26 August, 1999, Hong Kong. Bentham Press. ISBN-1-974612-28-5, p. 457-60.
8. Lai PT, Xu JP, Cheng YC. Enhancement of 1/f Noise Degradation in n-MOSFETs Under AC Hot-Carrier Stress. The Fifteenth International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF), 23-26 August 1999, Hong Kong. Bentham Press. ISBN-1-974612-28-5, p. 461-4.