Low frequency noise-based monitoring of the effects of RF and DC stress on AlGaN/GaN MODFETs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 78-81

  Valizadeh, Pouya ^a   Pavlidis, Dimitris ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Current degradation; DC stress; Low frequency noise; MODFET; RF stress

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; STRESSES; THERMAL NOISE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; CURRENT DEGRADATION; LOW FREQUENCY NOISE; MODULATION DOPED FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0348195945     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252366     Document Type: Conference Paper

References (6)

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