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Volumn 41, Issue 11, 2006, Pages 2589-2599

A 1.8-V 256-Mb multilevel cell NOR flash memory with BGO function

Author keywords

Background operation (BGO); Block redundancy; Channel initiated secondary electron (CHISEL); Dual step pulse (DSP) programming; Local interconnect (LIC); Mirrored current sensing (MCS) read; Multilevel cell (MLC); NOR flash memory

Indexed keywords

BACKGROUND OPERATION (BGO); BLOCK REDUNDANCY; CHANNEL INITIATED SECONDARY ELECTRON (CHISEL); DUAL-STEP PULSE (DSP) PROGRAMMING; LOCAL INTERCONNECT (LIC); MIRRORED CURRENT SENSING (MCS) READ; MULTILEVEL CELL (MLC); NOR FLASH MEMORY;

EID: 33750807009     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2006.883319     Document Type: Conference Paper
Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.