A 1.8V 64Mb 100MHz flexible read while write flash memory

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2001, Pages 32-33

  Pathak, B ^a   Cabrera, A ^a   Christensen, G ^a   Darwish, A ^a   Goldman, M ^a   Haque, R ^a   Jorgensen, J ^a   Kajley, R ^a   Ly, T ^a   Marvin, F ^a   Monasa, S ^a   Nguyen, Q ^a   Pierce, D ^a   Sendrowski, A ^a   Sharif, I ^a   Shimoyoshi, H ^a   Smidt, A ^a   Sundaram, R ^a   Taub, M ^a   Tran, W ^a   Trivedi, R ^a   Walimbe, P ^a   Yu, E ^a   more..

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; CODES (SYMBOLS); COUNTING CIRCUITS; FLASH MEMORY;

ADDRESS TRANSITION DETECTION (ATD); FLEXIBLE READ WHILE WRITE (RWW) FLASH MEMORY;

NONVOLATILE STORAGE;

EID: 0035054763     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A 3.3V 16Mb flash memory with advanced write automations
2. A 3.3V 50MHz synchronous 16Mb flash memory
3. A high density performance 180nm generation Etox™ flash memory technology