Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2387-2389

  Takagi, Hideki ^a   Maeda, Ryutaro ^a   Hosoda, Naoe ^b   Suga, Tadatomo ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000656208     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123860     Document Type: Article

References (22)

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