A dynamic study for wafer-level bonding strength uniformity in low-temperature wafer bonding

Electrochemical and Solid-State Letters

Volumn 8, Issue 10, 2005, Pages

  Zhang, Xuanxiong ^a   Raskin, Jean Pierre ^b  

^a SHANGHAI RESEARCH CENTER FOR WIRELESS COMMUNICATIONS   (China)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); INTERFACIAL ENERGY; PLASMA APPLICATIONS; SILICON WAFERS;

LOW-TEMPERATURE WAFER BONDING; PLASMA ASSISTED WAFER BONDING; SURFACE ENERGY TESTING; WAFER-LEVEL BONDING STRENGTH;

BONDING;

EID: 25644446178     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2012288     Document Type: Article

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