Transient enhanced diffusion and deactivation of ion-implanted As in strained Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 131-135

  Dilliway, G D M ^a   Smith, A J ^a   Hamilton, J J ^a   Benson, J ^a   Xu, Lu ^b   McNally, P J ^b   Cooke, G ^c   Kheyrandish, H ^c   Cowern, N E B ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c MATS UK   (United Kingdom)

Author keywords

Arsenic; Dopant activation; Rapid thermal annealing; Strain effects; Strain relaxed SiGe; Strained silicon; Transient enhanced diffusion

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DIFFUSION; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; STRAIN;

DOPANT ACTIVATION; STRAIN-RELAXED SIGE; STRAINED SILICON; TRANSIENT ENHANCED DIFFUSION;

ARSENIC;

EID: 23444448990     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.114     Document Type: Conference Paper

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