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Volumn 37, Issue 12, 2006, Pages 1442-1445

MBE growth and processing of diluted nitride quantum well lasers on GaAs (1 1 1)B

Author keywords

(111)B; Diluted nitrides; Laser diodes; MBE

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

DILUTED NITRIDES; EDGE EMITTING LASER DIODES; LASER EMISSION; ROOM TEMPERATURE;

QUANTUM WELL LASERS;

EID: 33750719982 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2006.05.005 Document Type: Article

Times cited : (3)

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