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Volumn 192, Issue 3-4, 1998, Pages 363-371

Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE

(6) Sanchez J J a Marty, O b Hopkinson, M c Izpura, I a Guzman A a Tijero, J M G d

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b UNIVERSITÉ LYON 1 (France)

c UNIVERSITY OF SHEFFIELD (United Kingdom)

d UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; LUMINESCENCE OF SOLIDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL LAYER THICKNESS (CLT); OPTICAL NOMARSKY SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032166117 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00471-0 Document Type: Article

Times cited : (5)

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