Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1085-1088

  Hopkinson, M ^a   Sanchez J J ^b   Gutierrez M ^c   Gonzalez D ^c   Aragon G ^c   Izpura, I ^b   Garcia R ^c  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

PLANAR VIEW TRANSMISSION ELECTRON MICROSCOPY (PVTEM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0345044920     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01531-0     Document Type: Article

References (5)

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5. Sánchez J.J., Marty O., Hopkinson M., Izpura I., Guzmán A., Tijero J.M.G. J. Crystal Growth. 192:1998;363.