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Volumn 9, Issue 12, 2006, Pages 351-353

Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors

(1) Pan, Tung Ming a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATABASE SYSTEMS; EXPERIMENTS; HOLE MOBILITY; OXIDES; SILICON; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSISTORS;

BIAS TEMPERATURE; SEMICONDUCTOR FIELD; TEMPERATURE INSTABILITY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 33750448613 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2357984 Document Type: Article

Times cited : (2)

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